MBR5H100MFST3G parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

MBR5H100MFST3G

Description:

DIODE SCHOTTKY 100V 5A 5DFN

Stock:

55712

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Capacitance at different Vr and F

Current - reverse leakage at different Vr

100 µA @ 100 V

Current average rectification (Io)

Diode type

Schottky barrier

Reverse recovery time (trr)

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Supplier device packaging

5-DFN(5x6)(8-SOFL)

Voltage DC reverse (Vr) (maximum)

100 V

Voltage at different If - forward (Vf)

730 mV @ 5 A

packing

TR,CT

series

working temperature

Encapsulation/Housing

8-PowerTDFN,5 feedthrough

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载MBR5H100MFST3G.pdf

MBR5H100MFST3G（Diode rectifier）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55712,Price reference "real-time change" China/Hongkong。 MBR5H100MFST3G package/specs, Download MBR5H100MFST3G、Datasheet。